The synthesis of diamond under ambient conditions is a dream of mankind, but there is a realistic chance for the next time of achieving the goal. The finding of a Korean researcher team that diamonds grow in a gallium-rich melt under ambient pressure but still high temperature in few minutes paws the way. The present contribution picks up the thread and makes further suggestions, based on empirical crystallographic experience. The formation of diamond under ambient pressure as well as ambient temperature is expected to be soon possible using advanced buffer layer materials such as cubic boron nitride on Si(111) substrates. Once the catalytic formation path is fully elucidated, the rapid synthesis of large octahedral crystals becomes routine. The formation of diamond under ambient conditions may be catalytically mediated by the electronic properties of Ga13 clusters in melt. It is proposed to use also gallium metal by the conventional HPHT diamonds synthesis to reduce pressure and temperature considerably as well by low-temperature substrate supported synthesis routes. Vacancies of silicon in diamond make it possible to tailor the material to quantum information processing applications.