This paper investigates FinFET transistor technology, aiming to address limitations in conventional planar CMOS transistors. The motivation stems from the escalating demandfor high-performance, low-power devices in sub-10nm technology nodes. The challenges of short-channel effects, leakage currents,and scalability constraints in planar CMOS transistors have prompted exploration into novel architectures like FinFETs. This research provides an indepth analysis of FinFETs’ threedimensional structure, fabrication, materials, and design considerations. We evaluate their advantages and limitations compared to traditional transistors in terms of power consumption, speed, and scalability. Our approach involves comparative studiesutilizing simulations, material analysis, and empirical data. By merging theory with practical insights, this paper aims to offera comprehensive view of FinFET technology’s potential and challenges in modern semiconductor applications. In conclusion,this study sheds light on FinFET transistors, emphasizing their fabrication, design, and performance characteristics. It highlightstheir promise as a solution to semiconductor industry challenges, paving the way for next-generation electronic devices.