Authors: Xiaodong Liu, Qichang Liang, Yu Liang
A novel potential-changing bipolar junction transistor is designed where collector-base junction has a larger barrier potential than emitter-base junction. As carriers move from the emitter tothe collector, they experience a potential rise and absorb heat due to Peltier effect insemiconductors. Such kind of transistor can be used for refrigeration and solar electricity withhigh efficiency.
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[v1] 2023-02-27 20:44:09
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