Authors: Xiaodong Liu, Qichang Liang, Yu Liang
A novel potential-changing transistor is designed using two PN junctions with different barrier values. The emitter-base junction has a small potential barrier which is forward biased. The collector-base junction has a large potential barrier and is unbiased. As the charge carriers move from the emitter to the base, most of them are swept to the collector due to the collector-base junction field. Since the collector-base barrier is larger than the emitter-base barrier, the potential of charge carriers is changed.
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[v1] 2023-02-21 20:54:08
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