We have reported that Maxwell's equations should be extended by using the charge creation-annihilationfield to treat the charge generation-recombination in semiconductor devices. Considering the charge creation-annihilation field, the extended Maxwell's and Dirac equations can be given by the same formula consisting of the dual 4-vector fields and the 8 by 8 spatially symmetric differential operator matrix. By using FDTD 3D simulations, we found that the Dirac field wave packet with enough smaller velocity than light can be stably created without explicit consideration of Zitterbewegung, although it is difficult in 1D simulations. We calculated the Dirac field propagation in the electric central force potential and succeeded to simulate the formation process of atomic orbitals based on the extended Dirac equation by this method without any physical approximation for the first time. A small unstable orbital appears at first and rapidly grows and finally becomes to a large stable orbital with the same radius as Bohr radius dividedby the atomic number given by Schrödinger equation. This result could be regarded as a proof of correctness of the charge creation-annihilation field model.