Classical Physics

    

High-Sensitivity MEMS Pressure Sensor Utilizing Bipolar Junction Transistor with Temperature Compensation

Authors: Mikhail Basov

The paper presents MEMS pressure sensor chip utilizing novel electrical circuit with bipolar-junction transistor-based (BJT) differential amplifier with negative feedback loop (PDA-NFL). Pressure sensor chips with two circuits have been manufactured and tested: the first chip uses circuit with vertical n-p-n (V-NPN) BJTs and the second – circuit with horizontal p-n-p (L-PNP) BJTs. The demonstrated approach allows for increase of pressure sensitivity while keeping the same chip size. It also can be used for chip size reduction and increase of pressure overload capability while maintaining the same pressure sensitivity. Significant reduction of both noise and temperature instability of output signal has been demonstrated using transistor amplifier with negative feedback loop.

Comments: 12 Pages. Sensors and Actuators A: Physical, https://doi.org/10.1016/j.sna.2019.111705

Download: PDF

Submission history

[v1] 2021-07-06 03:29:34

Unique-IP document downloads: 114 times

Vixra.org is a pre-print repository rather than a journal. Articles hosted may not yet have been verified by peer-review and should be treated as preliminary. In particular, anything that appears to include financial or legal advice or proposed medical treatments should be treated with due caution. Vixra.org will not be responsible for any consequences of actions that result from any form of use of any documents on this website.

Add your own feedback and questions here:
You are equally welcome to be positive or negative about any paper but please be polite. If you are being critical you must mention at least one specific error, otherwise your comment will be deleted as unhelpful.

comments powered by Disqus