Classical Physics

    

Modeling of Sensitive Element for Pressure Sensor Based on Bipolar Piezotransistor

Authors: Mikhail Basov, D.M. Prigodskiy

The paper describes modeling of high-sensitivity MEMS pressure sensor based on a circuit containing both active and passive stress-sensitive elements: a differential amplifier utilizing two n-p-n transistors and four p-type piezoresistors. The analysis on the basis of the developed mathematical model for a pressure sensor with traditional piezoresistive Wheatstone bridge and theoretical conclusions regarding the change in the electrical parameters of a bipolar transistor under the influence of deformation was carried out.

Comments: 12 Pages.

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[v1] 2021-07-06 19:13:32

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