General Mathematics

    

Design Methodology of Loaded-Line Phase Shifters based on Silicon and Gallium Arsenide Bulk P-I-N Diodes

Authors: Luis A. Iturri-Hinojosa, José L López-Bonilla, Daniel Rodríguez-Saldaña

A design methodology of loaded-line phase shifters based on bulk p-i-n diodes is presented. The design methodology is verified with phase shifters based on Silicon (Si) and Gallium Arsenide (GaAs) p-i-n diodes with different geometry. The responses of circuit design of 45° phase shift are analyzed. The circuits designed with bulk p-i-n diodes I-layer thickness of 50 microns reaches a variation of 4.8 degrees in phase shift responses in a bandwidth of 1GHz, at the center frequency of 10GHz. The reflection coefficient responses are less than 0.1 for the forward and reverse biased p-i-n diode.

Comments: 9 Pages.

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Submission history

[v1] 2014-05-07 23:47:50

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